[7p-C19-1~10] Challenges for 'multi-scale' processing - dry, wet, or else?...

[7p-C19-3] Atomic layer etching for 10 nm node and beyond

〇Kazuo Nojiri¹ (1.Lam Research)

Keywords:atomic layer etching, ALE, anisotropic etching

For Logic devices, FinFETs have already been in production. Required pattern size is less than 10 nm which is equivalent to 10s of atomic layers. Variability should be less than a few atoms. Thus atomic-scale processing precision is required. In this background, atomic layer etching (ALE) technology is actively developed recently. In this presentation, I will talk about the concept and applications of ALE.