[7p-C23-1~22] 6.4 Thin films and New materials

[7p-C23-4] Low temperature formation of Indium oxide and Indium Zinc oxide by solution process

〇Yuuki Yoshimoto¹, Jinwang Li¹, Tatsuya Shimoda¹ (1.Japan Advanced Institute of Science and Techonology)

Keywords:solution process, functional oxide material, low temperature formation

In fabrication of functional oxide thin films by solution process, we have focused on a gel state, which appears during the conversion from solution to solid. In the previous works, we found that ultraviolet (UV) irradiation to the oxide gels was an effective method to accelerate solidification of the oxide gels. In this study, to further decrease the processing temperature, we applied heating energy together with the UV irradiation to the oxide gels aiming to increase the annealing effect on them. By adopting this process to optimally designed solutions, we succeeded to fabricate semiconductor films with high performance at the processing temperature of 200 °C