[7p-C23-1~22] 6.4 Thin films and New materials

[7p-C23-3] Amorphous InSiO TFTs with a sharp subthreshold slope using ALD-AlO_x gate insulator

〇Shinya Aikawa^1,2, Takio Kizu², Toshihide Nabatame², Kazuhito Tsukagoshi² (1.Kogakuin Univ., 2.NIMS)

Keywords:Amorphous oxide, Atomic layer deposition, Thin-film transistors

We report on amorphous InSiO TFTs with a sharp subthreshold slope (73 mV/dec). The TFTs have a thin AlO_x dielectric layer (t = 16 nm) formed by a plasma-enhanced atomic layer deposition and were fabricated at relatively low-temperature processes (maximum process temperature was 400 °C). The results would be useful for the realization of low-temperature processed steep subthreshold TFTs.