The 78th JSAP Autumn Meeting, 2017

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16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[7p-C24-1~20] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Thu. Sep 7, 2017 1:45 PM - 7:00 PM C24 (C24)

Koichi Kajihara(Tokyo Metropolitan Univ.), Kenji Shinozaki(AIST)

6:45 PM - 7:00 PM

[7p-C24-20] Influence of conduction type of Ge-layer on TCR of Ge/Si/Ge structure for infrared bolometer

〇Shimpei Nishiyama1, Jun Takarada1, Akio Furukawa1 (1.Tokyo Univ. of Science)

Keywords:infrared sensor