Ge<sub>1-x</sub>Sn<sub>x</sub> Film Growth on Ge Substrate by MOCVD using Low Temperature Decomposition Tetra (isopropyl) tin as Sn precursor

Tatsumi Murakami; Kohei Suda; Kazutoshi Yoshioka; Yuki Takahashi; Syouta Komago; Naomi Sawamoto; Hideaki Machida; Yoshio Ohshita; Atsushi Ogura

Presentation information

Poster presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[7p-PA9-1~9] 15.5 Group IV crystals and alloys

Thu. Sep 7, 2017 4:00 PM - 6:00 PM PA9 (P)

4:00 PM - 6:00 PM

[7p-PA9-2] Ge_1-xSn_x Film Growth on Ge Substrate by MOCVD using Low Temperature Decomposition Tetra (isopropyl) tin as Sn precursor

〇Tatsumi Murakami¹, Kohei Suda¹, Kazutoshi Yoshioka¹, Yuki Takahashi¹, Syouta Komago¹, Naomi Sawamoto¹, Hideaki Machida², Yoshio Ohshita³, Atsushi Ogura¹ (1.Meiji Univ., 2.Gas-Phase Growth Ltd, 3.Toyota Tech. Inst.)

Keywords:Germanium Tin, MOCVD

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Presentation information

[7p-PA9-1~9] 15.5 Group IV crystals and alloys

[7p-PA9-2] Ge1-xSnx Film Growth on Ge Substrate by MOCVD using Low Temperature Decomposition Tetra (isopropyl) tin as Sn precursor

[7p-PA9-2] Ge_1-xSn_x Film Growth on Ge Substrate by MOCVD using Low Temperature Decomposition Tetra (isopropyl) tin as Sn precursor