[7p-PA9-1~9] 15.5 Group IV crystals and alloys

[7p-PA9-5] Bi-mediated formation of Ge nanodots by vacuum evaporation and low temperature annealing -3

〇(M1)Kazuto Tsushima¹, Kensuke Takita¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh², Takayuki Ikeda³, Seiichiro Mizuno³, Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.NTT Basic Res. Labs., 3.NTT-AT)

Keywords:nanodots, germanium, bismuth

We have proposed the fabrication method of Bi-mediated Ge nanodots by vacuum evaporation and low-temperature annealing, and also reported that we have successfully formed crystalline Ge nanodots on a Si substrate with a thermal oxide film. In this report, we have studied the formation process of the nanodots by STEM observation and EDX-element-mapping evaluation for both of the samples before and after 300°C annealing process. We have revealed the phenomenon, which is considered to be the layer exchange between Bi and Ge, is occurred at the initial formation stage of the Bi-mediated Ge nanodots.