[7p-PB3-1~6] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[7p-PB3-2] Pillar Impurity Density Dependence of SBCD With Super Junction Structure

〇Hirotaka Tsushima¹, Tsugutomo Kudoh², Fumihiko Sugawara¹ (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

Keywords:Self-biased Channel Diode, Super Junction Structure, Integration

The authors are investigating low loss by improving the integration degree of self-biased channel diode with super junction structure. In this device, in order to realize a low on-state voltage, a unit structure is adopted in which the source and body junctions are shallowed and the p pillar width is reduced. In the above structure, simulation is performed by changing the impurity density of the p pillar layer. It is found that there is an optimum value of impurity density for high breakdown voltage, and under this condition, it does not adversely affect low loss characteristics.