[7p-PB6-1~10] 15.7 Crystal evaluation, impurities and crystal defects

[7p-PB6-5] Atomic structures of grown-in Si-P precipitates in red-phosphorus heavily doped CZ-Si crystals

〇Takeshi Senda¹, Takashi Ishikawa¹, Hiroyuki Fujimori¹, Hisashi Matsumura¹, Shingo Narimatsu¹, Yoshiaki Abe¹, Tomoyuki Horikawa¹ (1.GlobalWafers Japan)

Keywords:silicon

The structures of grown-in defects in red-phosphorus (P) heavily doped Czochralski (CZ) - Silicon (Si) crystals of resistivity 1 mΩcm or less were analyzed.The phosphorus concentration were 8e19 atoms/cc. It was observed using cross sectional transmission electron microscopy (TEM). As a result, high-concentration phosphorus-containing gown-in Si-P precipitation was confirmed in CZ-Si crystal. We estimated that the Si-P precipitation happened because of the supersaturation of red phosphorous during crystal pulling.