[7p-PB7-1~56] 10 Spintronics and Magnetics（Poster）

[7p-PB7-37] Crystallization condition of a γ-AlO_x tunnel barrier layer on GaAs in spin-LED

〇Satoshi Shimbo¹, Nishizawa Nozomi¹, Munekata Hiro¹ (1.FIRST TiTech.)

Keywords:Spintronics, Circularly polarized light, Tunnel barrier

Recently, we have reported EL with pure circular polarization at RT in Spin-LEDs. One of the key layers is a γ-like AlO_x layer, which has the following characteristics; (1) suppression of interfacial reaction, (2) electrical robustness, (3) low density of interface state, and (4) high spin injection efficiency. Reported here is dependencies of the growth temperature and thickness of Al epilayer on resultant properties, and discussions on (1) to (4).