[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

[7p-S22-14] Frequency characteristics evaluation of EM-field generated by GaN-HEMT switching circuits

〇Katsumi Furuya¹, Toshihide Ide¹, Hiroshi Chonan¹, Ryosaku Kaji¹, Mitsuaki Shimizu¹, Masahiko Mori¹ (1.AIST)

Keywords:GaN-HEMT, unwanted emission, switching

GaN device is expected as the key for "Energy saving". In order to evaluate the emission from the GaN-HEMT voltage converters when the device operates the switching, switching circuits that use GaN-HEMT devices of higher breakdown voltage than them used in previous examination are prepared. They are measured by the magnetic field probe. The peak frequency characteristics to the circuit input voltage of the measurement result are, just like before, coincide well with the series resonance frequency by the inductance of the current path and the output capacity of the circuit.