Improvement of current controllability of Al<sub>2</sub>O<sub>3</sub>-gate AlGaN/GaN MOS HEMTs

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

2:15 PM - 2:30 PM

〇Kenya Nishiguchi¹, Syota Kaneki¹, Tamotsu Hashizume¹ (1.RCIQE)

Keywords:GaN, HEMT, MOS