[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

△ [7p-S22-8] Threshold Voltage Engineering of Recessed MIS-Gate N-polar GaN HEMTs

〇Kiattiwut Prasertsuk¹, Tomoyuki Tanikawa¹, Takeshi Kimura¹, Shigeyuki Kuboya¹, Tetsuya Suemitsu², Takashi Matsuoka¹ (1.IMR, Tohoku Univ., 2.CIES, Tohoku Univ.)

Keywords:N-polar GaN, Recess MIS-gate, High Electron Mobility Transistors (HEMTs)