[8a-A301-1~11] 15.4 III-V-group nitride crystals

[8a-A301-1] Boron Nitride Thin Films Grown on (0001) Sapphire Substrates by Molecular Beam Epitaxy

〇Yasuyuki Kobayashi¹, Takuma Kimura¹, Hideki Nakazawa¹, Hiroshi Okamoto¹, Masanobu Hiroki², Kazuhide Kumakura² (1.Hirosaki Univ., 2.NTT BRL)

Keywords:boron nitride, molecular beam epitaxy

Boron nitride (BN) thin films were grown on (0001) sapphire substrates by plasma-assisted molecular beam epitaxy. The thickness (11 nm) of the BN was evaluated by X-ray reflectance and atomic force microscopy showed that the BN thin films had flat surfaces. Fourier transform infrared spectroscopy revealed that sp²-bonded BN thin films were formed.