The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[8a-A301-1~11] 15.4 III-V-group nitride crystals

Fri. Sep 8, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Motoaki Iwaya(Meijo Univ.), Tetsuya Akasaka(NTT)

10:30 AM - 10:45 AM

[8a-A301-6] Consideration of inter-facet variations of In composition in 3D faceted InGaN quantum wells

〇(D)Yoshinobu Matsuda1, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ.)

Keywords:metal-organic vapor phase epitaxy, selective area epitaxy, polychromatic emission

Three dimensionally (3D) faceted InGaN quantum wells (QWs) are promising for phosphor-free white LEDs. However, the different inter-facet variations of In compositions between the 3D QWs on (0001) and (-1-12-2) is not clearly clarified. In this study, we analyze the dynamics of precursors on the facets, and consider the dominant mechanism to determine the inter-facet variations of In compositions in the 3D QWs on (0001) and (-1-12-2).