Growth of relaxed thick InGaN layer and its evaluation

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 8, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

10:45 AM - 11:00 AM

〇naoki morishita¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi Univ)

Keywords:InGaN