[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-10] Chemical state analysis of 4H-SiC polished under ultraviolet-ray excitation

〇Masaru Takizawa¹, Akihiro Hata¹, Kei Mitsuhara¹, Takeshi Tanaka¹ (1.Ritsumeikan Univ.)

Keywords:SiC, ulrtaviolet-ray aided machining, X-ray absorption spectroscopy

To efficiently obtain a flat surface of 4H-SiC, which has attracted much attention as a substrate for electronic devices, many polishing procedures have been performed. Among them, an ultraviolet-ray aided machining (U-RAM), which attempts to add a chemical reaction through ultraviolet-ray irradiation to a mechanical polishing, is a promising procedure to obtain a flat surface of 4H-SiC in a short time. In order to investigate how chemical states change in the U-RAM process, we have performed X-ray absorption fine structure measurements at the BL-8 of SR center, Ritsumeikan University. After the U-RAM, another chemical state, which is different from SiO₂, was found on the surface while the bulk chemical state was confirmed to be SiC. This new state probably of a mixed compound of Si, C and O is suggested to make polishing efficiency of U-RAM better.