Oral presentation
13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
Fri. Sep 8, 2017 9:00 AM - 11:45 AM A411 (411)
Takashi Hasunuma(Univ. of Tsukuba)
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9:00 AM - 9:15 AM
〇Koichi Kato1, Katsuyuki Fukutani1 (1.Univ. Tokyo, IIS)
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9:15 AM - 9:30 AM
〇(M2)Koki Nakane1, Motohiro Tomita1,2, Watanabe Takanobu1 (1.Waseda Univ., 2.JSPS Research PD)
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9:30 AM - 9:45 AM
〇Keita Nomura1,2, Hiroaki Itsuji1,2, Daisuke Kobayashi1,2, Kazuyuki Hirose1,2 (1.Univ. Tokyo, 2.ISAS/JAXA)
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9:45 AM - 10:00 AM
〇(D)ChinHan Chung1,2, Daisuke Kobayashi1,2, Kazuyuki Hirose1,2 (1.Univ. of Tokyo, 2.ISAS/JAXA)
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10:00 AM - 10:15 AM
〇HIROAKI ITSUJI1,2, DAISUKE KOBAYASHI1,2, OSAMU KAWASAKI3, DAISUKE MATSUURA4, TAKANORI NARITA4, MASAHIRO KATO4, SHIGERU ISHII4, KAZUNORI MASUKAWA4, KAZUYUKI HIROSE1,2 (1.Univ. Tokyo, 2.ISAS/JAXA, 3.JAXA R&D, 4.MHI Ltd.)
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10:30 AM - 10:45 AM
〇Takahiro Harie1,2, Kobayashi Daisuke2, Yamamoto Tomoyuki1, Hirose Kazuyuki1,2 (1.Waseda Univ., 2.ISAS/JAXA)
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10:45 AM - 11:00 AM
〇Taiki Sakamoto1, Yasuhiko Shimotsuma1, Masaaki Sakakura2, Kiyotaka Miura1, Satoru Hachinohe3 (1.Kyoto Univ., 2.Next Generation Laser Processing Technology Research Association, 3.Proud Inc.)
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11:00 AM - 11:15 AM
〇(DC)Sohya Kudoh1, R.M.D. Mailig1, Shin Ishimatsu1, Shun-ichiro Ohmi1 (1.Tokyo Tech)
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11:15 AM - 11:30 AM
Koichi Murata1,2, 〇Kazushi Miki1,2,5, Kirkham Christopher1,2,3, Satoshi Tsubomatsu1,2, Takashi Kanazawa1,2, Kiyofumi Nitta4, Yasuko Terada4, Tomoya Uruga4, Koh-ichi Nittoh1, Bowler David R.1,3 (1.NIMS, 2.U. Tsukuba, 3.LCN-UCL, 4.JASRI, 5.U. Hyogo)
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11:30 AM - 11:45 AM
〇Masaru Takizawa1, Akihiro Hata1, Kei Mitsuhara1, Takeshi Tanaka1 (1.Ritsumeikan Univ.)
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