Hf-based MONOS nonvolatile memory fabricated by in-situ process

Sohya Kudoh; R.M.D. Mailig; Shin Ishimatsu; Shun-ichiro Ohmi

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 8, 2017 9:00 AM - 11:45 AM A411 (411)

Takashi Hasunuma(Univ. of Tsukuba)

11:00 AM - 11:15 AM

△ [8a-A411-8] Hf-based MONOS nonvolatile memory fabricated by in-situ process

〇(DC)Sohya Kudoh¹, R.M.D. Mailig¹, Shin Ishimatsu¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:non-volatile memory, silicon, In-situ process

The effect of Si(100) surface flattening by annealing at 1050 °C in Ar/4%H₂ ambient on Hf-based MONOS type memory characteristics was investigated in previous report. In this study, the effect of in-situ process on the electrical characteristics of Hf-based MONOS nonvolatile memory was investigated.