Oral presentation

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 8, 2017 9:00 AM - 11:45 AM A411 (411)

Takashi Hasunuma(Univ. of Tsukuba)

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9:00 AM - 9:15 AM

[8a-A411-1] Atomic H Charge and Blueshift of H₂ Molecular Vibration in SiO₂/Si systems

〇Koichi Kato¹, Katsuyuki Fukutani¹ (1.Univ. Tokyo, IIS)

9:15 AM - 9:30 AM

[8a-A411-2] Prediction of Dipole Moments at Multicomponent Oxide Interfaces by Neural Network Model

〇(M2)Koki Nakane¹, Motohiro Tomita^1,2, Watanabe Takanobu¹ (1.Waseda Univ., 2.JSPS Research PD)

9:30 AM - 9:45 AM

△ [8a-A411-3] SiO₂/Si Interface Trap Buildup Induced by Infrared Pulse Laser Irradiation

〇Keita Nomura^1,2, Hiroaki Itsuji^1,2, Daisuke Kobayashi^1,2, Kazuyuki Hirose^1,2 (1.Univ. Tokyo, 2.ISAS/JAXA)

9:45 AM - 10:00 AM

▼ [8a-A411-4] Heavy Ion Generated Current Leading to Long Line-type Soft Errors in Thin BOX SOI SRAMS

〇(D)ChinHan Chung^1,2, Daisuke Kobayashi^1,2, Kazuyuki Hirose^1,2 (1.Univ. of Tokyo, 2.ISAS/JAXA)

10:00 AM - 10:15 AM

△ [8a-A411-5] Study on abnormal line-type soft errors in thin-BOX SOI SRAMs investigated by pulsed laser
employing two-photon absorption process

〇HIROAKI ITSUJI^1,2, DAISUKE KOBAYASHI^1,2, OSAMU KAWASAKI³, DAISUKE MATSUURA⁴, TAKANORI NARITA⁴, MASAHIRO KATO⁴, SHIGERU ISHII⁴, KAZUNORI MASUKAWA⁴, KAZUYUKI HIROSE^1,2 (1.Univ. Tokyo, 2.ISAS/JAXA, 3.JAXA R&D, 4.MHI Ltd.)

10:30 AM - 10:45 AM

△ [8a-A411-6] Measurement of surface potential as afunction SiO₂film thickness for investigation of self-compensation mechanism of X-ray induced charge-up on SiO₂surface

〇Takahiro Harie^1,2, Kobayashi Daisuke², Yamamoto Tomoyuki¹, Hirose Kazuyuki^1,2 (1.Waseda Univ., 2.ISAS/JAXA)

10:45 AM - 11:00 AM

△ [8a-A411-7] Low temperature deformation of Ge single crystal by direct electric heating

〇Taiki Sakamoto¹, Yasuhiko Shimotsuma¹, Masaaki Sakakura², Kiyotaka Miura¹, Satoru Hachinohe³ (1.Kyoto Univ., 2.Next Generation Laser Processing Technology Research Association, 3.Proud Inc.)

11:00 AM - 11:15 AM

△ [8a-A411-8] Hf-based MONOS nonvolatile memory fabricated by in-situ process

〇(DC)Sohya Kudoh¹, R.M.D. Mailig¹, Shin Ishimatsu¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

11:15 AM - 11:30 AM

[8a-A411-9] Mn δ doping into Ge/Si hetero interface with a Mn nanostructure

Koichi Murata^1,2, 〇Kazushi Miki^1,2,5, Kirkham Christopher^1,2,3, Satoshi Tsubomatsu^1,2, Takashi Kanazawa^1,2, Kiyofumi Nitta⁴, Yasuko Terada⁴, Tomoya Uruga⁴, Koh-ichi Nittoh¹, Bowler David R.^1,3 (1.NIMS, 2.U. Tsukuba, 3.LCN-UCL, 4.JASRI, 5.U. Hyogo)

11:30 AM - 11:45 AM

[8a-A411-10] Chemical state analysis of 4H-SiC polished under ultraviolet-ray excitation

〇Masaru Takizawa¹, Akihiro Hata¹, Kei Mitsuhara¹, Takeshi Tanaka¹ (1.Ritsumeikan Univ.)

Oral presentation

[8p-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 8, 2017 1:15 PM - 4:00 PM A411 (411)

Koichiro Saga(Sony)

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1:15 PM - 1:30 PM

[8p-A411-1] Influence of VPT-Induced Trace Particles on Sensitivity in TXRF Measurements

〇Rikiichi Ohno¹, Koichiro Saga¹ (1.Sony Semiconductor Solutions)

1:30 PM - 1:45 PM

[8p-A411-2] Evaluation of Bulk Lifetime and Surface Recombination Velocity on Si Wafer Using QSSPC Measurements

〇akira nakayama¹, Hiromichi Yoshikawa¹, Shota Toyokura¹, Koji Amazutsumi¹ (1.Kyocera)

1:45 PM - 2:00 PM

[8p-A411-3] Influence of Cleanroom Air for Surface Recombination Changing on the
Hydrogen-Terminated Silicon Observed by μ-PCD Lifetime Measurement

〇Nobue Araki^1,2, Hiromi Hidaka¹, Moriya Miyashita¹, Haruhiko Udono² (1.GlobalWafers Japan Co., Ltd., 2.Ibaraki Univ.)

2:00 PM - 2:15 PM

[8p-A411-4] Initation and Relaxation of Interaction Between Organic Molecules Adsorbed on Silicon Surface

〇Yifan Zhou¹, Hitosi Habuka¹ (1.Yokohama Nat. Univ.)

2:15 PM - 2:30 PM

[8p-A411-5] Analysis method of nano-particles on a silicon wafer surface

〇Kaoru Fujihara¹, Kazuya Doabshi¹, Misako Saito¹, Satoshi Onodera², Yoshikazu Furusawa² (1.Tokyo Electron, 2.Tokyo Electron Tohoku)

2:45 PM - 3:00 PM

[8p-A411-6] Behavior analysis of Si etching process with the HF/HNO3 mixture by single spin wafer processor (3)

〇Takashi Oinoue¹, Suguru Saito², Atsushi Okuyama², Yoshiya Hagimoto², Hayato Iwamoto² (1.Sony Semiconductor Manufacturing, 2.Sony Semiconductor Solutions)

3:00 PM - 3:15 PM

[8p-A411-7] Electrostatic Discharge Prevention in the Ultra-Pure Water Spray Cleaning of Semiconductor Chips using Induction Charging.

〇Yoshiyuki Seike¹, Taiki Tangiku¹, Yoshinori Kobayashi², Keiji Miyachi², Masahiko Amari², Tatsuo Mori¹ (1.Aichi Insit. Tech., 2.Asahi Sunac)

3:15 PM - 3:30 PM

[8p-A411-8] Effects of brush rotation on a friction generated by scrubbing a PVA brush without skin layer

〇(M2)Masayoshi Ito¹, Toshiyuki Sanada¹, Akira Hukunaga², Hiyama Hirokuni² (1.Shizuoka univ, 2.Ebara Corporation)

3:30 PM - 3:45 PM

[8p-A411-9] Water Flow Recirculation Control in Batch-Type Silicon Wafer Wet Cleaner

Kento Miyazaki¹, 〇Miya Matsuo¹, Shogo Okuyama¹, Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

3:45 PM - 4:00 PM

[8p-A411-10] Chemical Compatibility Study of Polyarylsulfone Membrane Filter

〇Tomoyuki Takakura¹, Shuichi Tsuzuki¹ (1.Nihon Pall Ltd.)

Poster presentation

[7p-PB3-1~6] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Sep 7, 2017 1:30 PM - 3:30 PM PB3 (P)

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1:30 PM - 3:30 PM

[7p-PB3-1] Effects of effective equations for channel electrons on FET : comparative analysis of the degree of degradation of potential profile and quantum tunneling currentFET

〇Yuki Hashimoto¹, Matsuto Ogawa¹, Satofumi Souma¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[7p-PB3-2] Pillar Impurity Density Dependence of SBCD With Super Junction Structure

〇Hirotaka Tsushima¹, Tsugutomo Kudoh², Fumihiko Sugawara¹ (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

1:30 PM - 3:30 PM

[7p-PB3-3] Importance of scattering related one-dimensionality in transfer characteristics of silicon nanowire FET

〇Ryoma Shimizu¹, Matsuto Ogawa¹, Satofumi Souma¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[7p-PB3-4] Deformation Potentials of Valence Band in Si and Ge at Room Temperature

〇Kazunori Matsuda¹, Shiro Nagaoka², Yozo Kanda³ (1.Tokubun Univ., 2.NIT Kagawa, 3.Toyo Univ)

1:30 PM - 3:30 PM

△ [7p-PB3-5] Annealing dependence of active dopant concentration in the ultra-shallow region

〇Yudai Higa¹, Sakura Takeda¹, Tatsuya Ebato¹, Masatoshi Yoneda¹, Akiho Fujinaka¹, Kazuho Morita¹, Natsuki Morimoto¹, Kevin Ang², Xin Tan¹, Hiroshi Daimon¹, Kazuo Tsutsui³ (1.Nara Institute of Science and Technology, 2.Nagoya Institute of Technology, 3.Tokyo Institute of Technology)

1:30 PM - 3:30 PM

[7p-PB3-6] Study of charge up after single wafer wet processing

〇Masayuki Kawakami¹, Daisaku Yano¹, Koji Yamanaka¹, Hiroyuki Araki², Katsuhiko Miya³, Masanori Suzuki⁴, Nobuo Kawase⁵ (1.Organo corp., 2.SCREEN Semiconductor Solutions Co., 3.SCREEN Holdings Co., 4.Techno Ryowa Ltd., 5.JoyNTech)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1] Atomic H Charge and Blueshift of H₂ Molecular Vibration in SiO₂/Si systems

[8a-A411-2] Prediction of Dipole Moments at Multicomponent Oxide Interfaces by Neural Network Model

△ [8a-A411-3] SiO₂/Si Interface Trap Buildup Induced by Infrared Pulse Laser Irradiation

▼ [8a-A411-4] Heavy Ion Generated Current Leading to Long Line-type Soft Errors in Thin BOX SOI SRAMS

△ [8a-A411-5] Study on abnormal line-type soft errors in thin-BOX SOI SRAMs investigated by pulsed laser
employing two-photon absorption process

△ [8a-A411-6] Measurement of surface potential as afunction SiO₂film thickness for investigation of self-compensation mechanism of X-ray induced charge-up on SiO₂surface

△ [8a-A411-7] Low temperature deformation of Ge single crystal by direct electric heating

△ [8a-A411-8] Hf-based MONOS nonvolatile memory fabricated by in-situ process

[8a-A411-9] Mn δ doping into Ge/Si hetero interface with a Mn nanostructure

[8a-A411-10] Chemical state analysis of 4H-SiC polished under ultraviolet-ray excitation

[8p-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8p-A411-1] Influence of VPT-Induced Trace Particles on Sensitivity in TXRF Measurements

[8p-A411-2] Evaluation of Bulk Lifetime and Surface Recombination Velocity on Si Wafer Using QSSPC Measurements

[8p-A411-3] Influence of Cleanroom Air for Surface Recombination Changing on the
Hydrogen-Terminated Silicon Observed by μ-PCD Lifetime Measurement

[8p-A411-4] Initation and Relaxation of Interaction Between Organic Molecules Adsorbed on Silicon Surface

[8p-A411-5] Analysis method of nano-particles on a silicon wafer surface

[8p-A411-6] Behavior analysis of Si etching process with the HF/HNO3 mixture by single spin wafer processor (3)

[8p-A411-7] Electrostatic Discharge Prevention in the Ultra-Pure Water Spray Cleaning of Semiconductor Chips using Induction Charging.

[8p-A411-8] Effects of brush rotation on a friction generated by scrubbing a PVA brush without skin layer

[8p-A411-9] Water Flow Recirculation Control in Batch-Type Silicon Wafer Wet Cleaner

[8p-A411-10] Chemical Compatibility Study of Polyarylsulfone Membrane Filter

[7p-PB3-1~6] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[7p-PB3-1] Effects of effective equations for channel electrons on FET : comparative analysis of the degree of degradation of potential profile and quantum tunneling currentFET

[7p-PB3-2] Pillar Impurity Density Dependence of SBCD With Super Junction Structure

[7p-PB3-3] Importance of scattering related one-dimensionality in transfer characteristics of silicon nanowire FET

[7p-PB3-4] Deformation Potentials of Valence Band in Si and Ge at Room Temperature

△ [7p-PB3-5] Annealing dependence of active dopant concentration in the ultra-shallow region

[7p-PB3-6] Study of charge up after single wafer wet processing

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8a-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [8a-A411-3] SiO2/Si Interface Trap Buildup Induced by Infrared Pulse Laser Irradiation

▼ [8a-A411-4] Heavy Ion Generated Current Leading to Long Line-type Soft Errors in Thin BOX SOI SRAMS

△ [8a-A411-5] Study on abnormal line-type soft errors in thin-BOX SOI SRAMs investigated by pulsed laseremploying two-photon absorption process

△ [8a-A411-6] Measurement of surface potential as afunction SiO2 film thickness for investigation of self-compensation mechanism of X-ray induced charge-up on SiO2 surface

△ [8a-A411-7] Low temperature deformation of Ge single crystal by direct electric heating

△ [8a-A411-8] Hf-based MONOS nonvolatile memory fabricated by in-situ process

[8p-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[7p-PB3-1~6] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [7p-PB3-5] Annealing dependence of active dopant concentration in the ultra-shallow region

Authentication

△ [8a-A411-3] SiO₂/Si Interface Trap Buildup Induced by Infrared Pulse Laser Irradiation

△ [8a-A411-5] Study on abnormal line-type soft errors in thin-BOX SOI SRAMs investigated by pulsed laser
employing two-photon absorption process

△ [8a-A411-6] Measurement of surface potential as afunction SiO₂film thickness for investigation of self-compensation mechanism of X-ray induced charge-up on SiO₂surface