[8a-A413-1~7] 10.3 Spin devices, magnetic memories and storages

▲ [8a-A413-5] Perpendicularly magnetized L10-MnAl thin films for STT-MRAM

〇(D)Most Shahnaz Parvin, Miho Kubota, Mikihiko Oogane, Yasuo Ando

Keywords:STT- MRAM, MTJ, Gilbert damping constant

L1₀ ordered MnAl thin films were epitaxially grown by sputtering. In this work, we fabricated MnAl and (Mn_1-xCo_x)_0.5Al_0.5 films on MgO single crystal substrate having a high perpendicular magnetic anisotropy energy K_u , small saturation magnetization M_s and Gilbert damping constant .Both L1₀-ordered and highly (001)-oriented MnAl films were successfully fabricated.The substrate and annealing temperature were varied from 200⁰C to 400⁰C to improve the magnetic properties and surface morphology.The value of K_u for MnAl film was 1.2×10⁷ erg/cc, small saturation magnetization, M_s of 518 emu/cc and very smooth surface morphology were observed at substrate temperature of 350^oC .However the surface roughness were increased with the increasing of substrate temperature.In our previous works, it is expected the crystalline structure was improved by adding Co into MnAl .