Dependence of switching current on out-of-plane field in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis at low temperature

Junta Igarashi; Justin Llandro; Hideo Sato; Shunsuke Fukami; Hideo Ohno

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[8a-A413-1~7] 10.3 Spin devices, magnetic memories and storages

10.1と10.2と10.3のコードシェアセッションあり

Fri. Sep 8, 2017 9:00 AM - 10:45 AM A413 (413)

Tomohiro Koyama(Univ. of Tokyo)

10:15 AM - 10:30 AM

△ [8a-A413-6] Dependence of switching current on out-of-plane field in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis at low temperature

〇(M2)Junta Igarashi¹, Justin Llandro^1,2, Hideo Sato^1,2,3,4, Shunsuke Fukami^1,2,3,4, Hideo Ohno^1,2,3,4,5 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.CSRN, Tohoku Univ, 3.CSIS, Tohoku Univ., 4.CIES, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ.)

Keywords:magnetic tunnel junction, spin transfer torque