2017年第78回応用物理学会秋季学術講演会

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10 スピントロニクス・マグネティクス » 10.3 スピンデバイス・磁気メモリ・ストレージ技術

[8a-A413-1~7] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

10.1と10.2と10.3のコードシェアセッションあり

2017年9月8日(金) 09:00 〜 10:45 A413 (413)

小山 知弘(東大)

10:00 〜 10:15

[8a-A413-5] Perpendicularly magnetized L10-MnAl thin films for STT-MRAM

〇(D)Most Shahnaz Parvin、Miho Kubota、Mikihiko Oogane、Yasuo Ando

キーワード:STT- MRAM, MTJ, Gilbert damping constant

L10 ordered MnAl thin films were epitaxially grown by sputtering. In this work, we fabricated MnAl and (Mn1-xCox)0.5Al0.5 films on MgO single crystal substrate having a high perpendicular magnetic anisotropy energy Ku , small saturation magnetization Ms and Gilbert damping constant .Both L10-ordered and highly (001)-oriented MnAl films were successfully fabricated.The substrate and annealing temperature were varied from 2000C to 4000C to improve the magnetic properties and surface morphology.The value of Ku for MnAl film was 1.2×107 erg/cc, small saturation magnetization, Ms of 518 emu/cc and very smooth surface morphology were observed at substrate temperature of 350oC .However the surface roughness were increased with the increasing of substrate temperature.In our previous works, it is expected the crystalline structure was improved by adding Co into MnAl .