[8a-A414-1~8] 13.9 Optical properties and light-emitting devices

[8a-A414-3] Realization of red vertical microcavity LEDs with Eu-doped GaN as an active layer

〇(D)Tomohiro Inaba¹, Keishi Shiomi¹, Takanori Kojima¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka univ. Eng.)

Keywords:europium, GaN, microcavity

It is necessary to increase the light output of Eu-doped GaN (GaN: Eu) red LED for its practical use. In the past study, GaN: Eu has been inserted into the microcavity and enhanced photoluminescent intensity was observed. However, it was impossible to evaluate by electroexcitation due to the sample structure. In this presentation, we fabricated a microcavity using conductive distributed Bragg reflector (DBR) and observed a 5-fold increase in integrated light output intensity of GaN: Eu red LED.