Tomohiro Inaba

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Speaker, Author, Co-Author

Fri. Sep 8, 2017 9:30 AM - 11:30 AM A414 (414)

Oral presentation
| 13 Semiconductors
| 13.9 Optical properties and light-emitting devices

[8a-A414-1~8] 13.9 Optical properties and light-emitting devices

10:00 AM - 10:15 AM

[8a-A414-3] Realization of red vertical microcavity LEDs with Eu-doped GaN as an active layer

〇(D)Tomohiro Inaba¹, Keishi Shiomi¹, Takanori Kojima¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka univ. Eng.)

Tue. Sep 5, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[5a-A301-1~11] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM

△ [5a-A301-1] Study on light emission mechanism in Eu-doped GaN by the initial signal analysis of time-resolved spectroscopy

〇(D)Tomohiro Inaba¹, Takanori Kojima¹, Jun Tatebayashi¹, Genki Yamashita², Eichi Matsubara^2,3, Masaaki Ashida², Yasufumi Fujiwara¹ (1.Osaka univ. Eng., 2.Osaka univ. Eng. Sci., 3.Osaka dent. univ.)

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