The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.2 Graphene

[8a-C16-1~17] 17.2 Graphene

Fri. Sep 8, 2017 9:00 AM - 1:30 PM C16 (Training Room 1)

Seiji Akita(Osaka Pref. Univ.), Hiroki Hibino(Kwansei Gakuin Univ.)

9:45 AM - 10:00 AM

[8a-C16-4] Graphene Growth in Oxidizing Environment by Carbon Dioxides

Satoru KANEKO1,4, Shigeo YASUHARA2, Kazuo SATOH3, Manabu YASUI1, Masahito KUROUCHI1, Satomi TANAKA1, Chihiro KATO1, Akifumi MATSUDA4, Mamoru YOSHIMOTO4 (1.KISTEC, 2.JAC, 3.ORIST, 4.Tokyo Inst. Tech.)

Keywords:carbon dioxides, graphene, pulsed laser deposition

Many methods are proposed and actually have used to prepare graphene film such as thermal decomposition of silicon carbide (SiC), and chemical vapor deposition (CVD) method. However the CVD method requires metal catalyst (Cu, Ni), and films are required to transfer onto insulating substrates for device fabrications. Another interesting method employs pencils and paper. Paper sheet drown using a lead pencil is irradiated by femtosecond laser, and graphitic materials remain on the paper sheet. In this presentation, yet another method using pulsed laser deposition (PLD) in carbon oxide will be proposed.