[8a-C18-1~12] 13.5 Semiconductor devices and related technologies

[8a-C18-3] Influence of Quantum Effect on InGaAs / GaAsSb Double Gate Tunnel FET

〇Shogo Kunisada¹, Koichi Fukuda^1,2, Yasuyuki Miyamoto¹ (1.Tokyo Tech., 2.AIST)

Keywords:semiconductor

We describe the simulation method of TFET with quantum effect taken into account and the influence of quantum effect obtained. Schrödinger-Poisson was analyzed to find the first subband energy of the conduction band and the valence band. This subband energy is regarded as an effective bandgap widening, and device simulation is performed by reflecting it in the band parameter.