Channel thickness scaling induced electron mobility enhancement in UTB-GeOI

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

Fri. Sep 8, 2017 9:00 AM - 12:15 PM C18 (C18)

11:00 AM - 11:15 AM

〇(PC)WENHSIN CHANG¹, T. Irisawa¹, H. Ishii¹, H. Hattori¹, H. Ota¹, H. Takagi¹, Y. Kurashima¹, N. Uchida¹, T. Maeda¹ (1.AIST)

Keywords:GeOI, MOSFETs, mobility