[8a-PA3-1~27] 12.4 Organic light-emitting devices and organic transistors

[8a-PA3-19] Investigation of Low-molecular-weight Cross-linking Reagent for UV-light Cured Polysilsesquioxane Gate Dielectric Layers

〇(M2)Shuichi Okada¹, Yoshio Nakahara¹, Kazuyuki Uno¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

Keywords:organic thin film transistor, gate dielectric, polysilsesquioxane

We investigated the low-molecular-weight cross linkers for curing polysilsesquioxane (PSQ) gate dielectric layers of pentacene thin film transistors (TFTs) by irradiation of ultra-violet light. When a mixture of triallylcyanurate (TAC) and 1,3,5-benzenetrithiol (BTT), which did not comprise ester groups, was used as the cross linker, the average carrier mobility of the pentacene TFTs was 1.6 times higher than that of the TFTs fabricated with trimethylolpropane triacrylate (TMPTA) that comprised ester groups as the cross linker. This significant improvement of the carrier mobility is considered to be due to the decreased carrier scattering by the large electric dipole moment of the ester groups.