[8a-PA3-1~27] 12.4 Organic light-emitting devices and organic transistors

[8a-PA3-22] Evaluation of low-cost solution processed IGZO thin film transistor for flexible organic devices

〇Hiroshi Yamauchi¹, Shinpei Shu¹, Yugo Okada², Masatoshi Sakai¹, Masaaki Iizuka³, Kazuhiro Kudo¹ (1.Graduate School of Engineering, Chiba Univ., 2.Center of Frontier Science, Chiba Univ., 3.Faculty of Education, Chiba Univ.)

Keywords:IGZO, thin film transistor, flexible device

In this study, we focused the low temperature process of low rare metal IGZO TFTs for flexible devices. In general, required high temperature in solution process to cut chemical bond in organic compounds. Therefore, IGZO TFT fabricated by solution process need high temperature and flexible plastic films are not suitable as substrates.
The UV/O₃ assisted thermal treatment was found to be effective for lowering the process temperature of IGZO TFT manufacturing. In addition, most of IGZO-TFT reported in literature were in In: Ga: Zn = 1: 1: 1 or In rich regions. However, the reduction of In and Ga rare metals is desired from the point of view of resource depletion and low cost production. Therefore, in this study, a solution ratio is fixed at In = Ga = 10 % approximately that means very low rare materials solution.