[8a-PA4-1~31] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[8a-PA4-30] Thermal conductivity measurements of diamond and Ga₂O₃ thin films by 3ω-method

〇Shinichiro Suzuki¹, Ohmagari Shinya², Umezawa Hitoshi², Mokuno Yoshiaki², Akutsu Yusuke¹, Okamoto Naoki¹, Saito Takeyasu¹ (1.Osaka Pref. Univ., 2.AIST ADPERC)

Keywords:gallium oxide, polycrystalline diamond, thermal conductivity

Ga₂O₃ has wider band gap than SiC or GaN, which is promising feature as the next generation power semiconductor material. The merit includes easy preparation of high quality single crystal substrates of Ga₂O₃ at low cost. However, the low thermal conductivity is one of the drawbacks of Ga₂O₃ power devices, which results in the difficulty of thermal management of Ga₂O₃ power modules development. One of practical and desirable solutions is to integrate diamond heat sink with Ga₂O₃ power devices because of its highest thermal conductivity. In this work, we measured thermal conductivity of diamond and Ga₂O₃ thin films with 3ω method.