[8a-PA4-1~31] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

△ [8a-PA4-29] Characterization of Electrical Properties of α-Ga₂O₃ Films Grown on m-plane Sapphire Substrates

〇Katsuya Ota¹, Takahito Sekiyama¹, Kazuaki Akaiwa¹, Tomoki Abe¹, Takashi Shinohe², Kunio Ichino¹ (1.Tottori Univ., 2.FLOSFIA)

Keywords:gallium oxide, electrical property, mist chemical vapor deposition