[8a-S22-1~9] 13.8 化合物及びパワー電子デバイス・プロセス技術

▼ [8a-S22-7] C-V Measurements and Interfacial Property Analysis of NO₂ Hole Doped Diamond MOS Structure

〇(M2)Niloy Chandra Saha¹、Makoto Kasu¹ (1.Saga Univ.)

キーワード：Diamond MOS, interface state, NO2 oxidation

Diamond is the best electronic material for the high-power operation due to its high band-gap (5.47 eV) and high break down field (>10 MVcm^-1). NO₂ hole doping increase surface concentration and Al₂O₃ passivates the hole channel. However, the mechanisms of hole doping and Al₂O₃/diamond interface are not clearly understood. In this work, we fabricate diamond MOS structures with and without NO₂ hole doping and analyze the interface properties in order to investigate NO₂ hole doping effect.