[8a-S22-1~9] 13.8 Compound and power electron devices and process technology

△ [8a-S22-8] Degradation mechanisms of NO₂ adsorbed H-terminated diamond MOS FETs by constant voltage stress.

〇(M2)Kosuke Funaki¹, Yuma Ishimatsu¹, Satoshi Masuya¹, Kyosuke Miyazaki¹, Takayoshi Osima¹, Makoto Kasu¹, Toshiyuki Oishi¹ (1.Saga Univ.)

Keywords:Diamond, Transistor, DC stress

Diamond has excellent dielectric breakdown electric field, thermal conductivity and carrier mobility, and it is expected to be applied to high frequency and high output devices. Last time we reported stable operation in the atmosphere for 14.3 hours with NO₂ hole doping and Al₂O₃ protective film deposition applied. In this study, we examined the degradation mechanism by comparing the electrical characteristics before and after the stress. As a result, it was found that deterioration of DC stress is related to both deterioration of the gate insulating film and deterioration of the channel.