The 78th JSAP Autumn Meeting, 2017

Presentation information

Symposium (Oral)

Symposium » III-V semiconductor growth technology for innovative devices

[8p-A203-1~4] III-V semiconductor growth technology for innovative devices

Fri. Sep 8, 2017 1:15 PM - 3:15 PM A203 (203)

Ishikawa Fumitaro(Ehime Univ.)

2:45 PM - 3:15 PM

[8p-A203-4] Crystal growth technology of superlattice and its application to solar cells

Masakazu Sugiyama1 (1.RCAST, Univ. Tokyo)

Keywords:solar cells, superlattice, III-V compound semiconductor

There is an emerging application of III-V semiconductor superlattice for high-efficiency solar cells. The major example is the inclusion of strain-balanced superlattice in a multi-junction solar cell to improve the current matching among subcells while keeping lattice-matching relationship. For sufficient light absorption in solar cells, a large number of stacking (ca. 100 periods) is necessary, and precise control of stress accumulation and the management of interfaces using in situ monitoring is mandatory. Not only planar quantum wells but also quantum wires grown on a vicinal substrate are promising for boosting the efficiency of solar cells.