[8p-A204-1~10] Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

[8p-A204-1] β-Ga₂O₃ single crystal: a starting point and future expectation

〇Kiyoshi Shimamura¹, E.G. Villora¹, Kazuo Aoki², Noboru Ichinose³ (1.NIMS, 2.Koha Co., Ltd., 3.Waseda Univ.)

Keywords:gallium oxide, single crystal, wide bandgap semiconductor

In 2002, we have proposed β-Ga₂O₃ single crystals as a new wide bandgap semiconductor. Since then, we have been paying efforts to realize it. In this talk, we will introduce the original our wish and future expectation of β-Ga₂O₃ single crystals including the history of our research on them.