[8p-A204-1~10] Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

[8p-A204-10] The effect of improving crystal orientation of Ga₂O₃ on c-Se photoconversion layer of the Ga₂O₃/c-Se photodiode

〇Keitada Mineo¹, Shigeyuki Imura¹, Kazunori Miyakawa¹, Masakazu Namba¹, Hiroshi Ohtake¹, Misao Kubota¹ (1.NHK STRL)

Keywords:Ga2O3, selenium, image sensor

We have studied Ga₂O₃/crystalline Selenium PN junction photodiode for high sensitivity image sensor. In this work, we investigate the effect of crystallization of Ga₂O₃ in order to reduce the dark current and the operation voltage. Crystalline selenium was deposited on crystalline Ga₂O₃ by subsequent annealing. The crystal orientation of the Selenium on the crystalline Ga₂O₃ is improved as compared to that on amorphous Ga₂O₃.