The 78th JSAP Autumn Meeting, 2017

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Symposium (Oral)

Symposium » Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

[8p-A204-1~10] Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation

Fri. Sep 8, 2017 12:45 PM - 5:00 PM A204 (204)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Tomoki Abe(Tottori Univ.)

3:30 PM - 4:00 PM

[8p-A204-7] Prospects of Corundum-Structured α-Ga2O3 for Devices

〇Shizuo Fujita1 (1.Kyoto Univ.)

Keywords:gallium oxide, oxide semiconductor, mist CVD

Reviewing the characteristic features and research achievements on α-Ga2O3, prospects for future device applications will be described. The presentation will include the most up-to-date results obtained by a variety of institutes conducting the research on this material.