The 78th JSAP Autumn Meeting, 2017

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[8p-A301-1~12] 15.4 III-V-group nitride crystals

Fri. Sep 8, 2017 1:15 PM - 4:30 PM A301 (Main Hall)

Takayuki Nakano(Shizuoka Univ.), Tanikawa Tomoyuki(Tohoku Univ.)

1:15 PM - 1:30 PM

[8p-A301-1] Fabrication of GaN micro hexagonal frustum for high directional u-LED

〇Naoto Kumagai1, Tokio Takahashi1, Guangwei Cong1, Xuelun Wang1, Misato Shimizu1 (1.AIST)

Keywords:Nitride semiconductor, MOCVD, Selective area growth