[8p-A301-1~12] 15.4 III-V-group nitride crystals

[8p-A301-11] MOVPE growth behavior of AlGaN on RIE-GaN surface

〇Akio Yamamoto¹, Keito Kanatani¹, Shin-ya Makino¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

Keywords:nitrides, MOVPE

In the III-nitride semiconductor device processes, RIE has been indispensably employed because of the chemical stability of GaN and related alloys. The ion bombardment in RIE process introduces damage, mainly due to the preferential loss of N atoms, on the etched surface. Provided that such damage is effectively reduced and a high-quality film is grown on it, RIE surfaces can be used as active parts in a variety of devices. However, there have been few reports on the epitaxial growth on RIE-GaN surfaces. This paper reports the MOVPE growth behavior of AlGaN on RIE-GaN surface.