Enhanced Hole Generation in Mg-doped AlN/AlGaN superlattices with High Average Al Content

Kazuaki Ebata; Junichi Nishinaka; Yoshitaka Taniyasu; Kazuhide Kumakura

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[8p-A301-1~12] 15.4 III-V-group nitride crystals

Fri. Sep 8, 2017 1:15 PM - 4:30 PM A301 (Main Hall)

Takayuki Nakano(Shizuoka Univ.), Tanikawa Tomoyuki(Tohoku Univ.)

4:15 PM - 4:30 PM

[8p-A301-12] Enhanced Hole Generation in Mg-doped AlN/AlGaN superlattices with High Average Al Content

〇Kazuaki Ebata¹, Junichi Nishinaka¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlGaN, superlattice, hole concentration

We achieved a hole concentration of 4.4×10¹⁸ cm^-3 at RT in Mg-doped AlN/Al_0.75Ga_0.25N superlattices (SLs) even when the average Al content was as high as 80%. The temperature dependence of the hole concentration in the SLs shows the small ionization energy of 40 – 67 meV.