[8p-A405-1~13] 3.9 Terahertz technologies

△ [8p-A405-3] Liquid phase growth of impurity doped high resistivity GaSe crystal for suppression of free carrier absorption

〇Yohei Sato¹, Tang Chao¹, Tadao Tanabe¹, Oyama Yutaka¹ (1.Tohoku Univ.)

Keywords:gallinum selenide, solution growth, doping impurity

We grow gallium selenide crystal for light source of THz wave by Temperature Dependence Method under Controlled Vapor Pressure (TDM-CVP). In this study, Amphoteric impurity and transition metal doped GaSe crystals were grown by TDM-CVP for reduction of free carrier absorption in the low THz frequency range. Hall effect measurement and transparency measurement carried out in the grown crystals and influence on carrier concentration and transparency are considered.