[8p-C18-1~8] 13.5 Semiconductor devices and related technologies

[8p-C18-5] Resistive Switching Characteristics of CeO_x/SiO₂ with La₂O₃ Capping Layer

〇Kazuto Mizutani¹, Iriya Muneta¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Hiroshi Iwai², Kuniyuki Kakushima¹ (1.Tokyo Tech, 2.Tokyo Tech. IIR)

Keywords:semiconductor, resistive switching memory