The 78th JSAP Autumn Meeting, 2017

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Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[8p-PA1-1~27] 6.3 Oxide electronics

Fri. Sep 8, 2017 1:30 PM - 3:30 PM PA1 (P)

1:30 PM - 3:30 PM

[8p-PA1-15] Switching characteristics of NiO nanowire resistive switching random access memory

〇Takashige Aono1, Tadataka Watanabe2, Yosiki Takano2, Kouichi Takes2 (1.Graduate Nihon Univ., 2.Nihon Univ.)

Keywords:resistive switching random access memory, oxide nanowires