Orientational Control of a-axis in Initial Stage of InN by Si Nuclei Formation on Epitaxial Graphene Substrate

Presentation information

Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 8, 2017 1:30 PM - 3:30 PM PB1 (P)

1:30 PM - 3:30 PM

〇Daiki Ishimaru¹, Taiji Terai¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

Keywords:Nitride semiconductor, Epitaxial Graphene