[8p-PB1-1~19] 15.4 III-V-group nitride crystals

[8p-PB1-5] Study of surface states on GaN single-crystalline layer (Ⅱ)

〇Ai Mizuno¹, Reo Suzuki¹, Tsubasa Yoshimura¹, Wataru Watanabe¹, Ki Ando¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.School of Engineering, Tokyo Denki Univ.)

Keywords:GaN layer, XPS, TDS

In the our report, we have demonstrated surface state of GaN layer by Thermal Desorption Spectrometry(TDS) investigation, and the thermal desorption of Ga and O components near 500℃ were characterized. In this report, we describe the determination of surface chemical states of GaN layer using X-ray photoelectron spectroscopy(XPS).