3:30 PM - 3:45 PM ▲ [15p-503-7] Growth rate dependent near ideal vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates 〇Li-wen SANG1, Bing Ren1, Meiyong Liao1, Masatomo Sumiya1, Yasuo Koide1 (1.NIMS)