17:15 〜 17:30
▲ [15p-503-13] Morphology control of InGaN layer on GaN substrate by metalorganic vapor phase epitaxy
〇(D)Liu Zhibin1、Miyagoshi Ryosuke1、Nitta Shugo2、Honda Yoshio2、Amano Hiroshi2,3,4 (1.Graduate of Engi., Nagoya Univ.、2.IMASS, Nagoya Univ.、3.ARC, Nagoya Univ.、4.VBL, Nagoya Univ.)