5:15 PM - 5:30 PM
▲ [15p-503-13] Morphology control of InGaN layer on GaN substrate by metalorganic vapor phase epitaxy
〇(D)Zhibin Liu1, Ryosuke Miyagoshi1, Shugo Nitta2, Yoshio Honda2, Hiroshi Amano2,3,4 (1.Graduate of Engi., Nagoya Univ., 2.IMASS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)