Shinji Yamada

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 9:30 AM - 11:45 AM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14a-315-1~8] 13.8 Compound and power electron devices and process technology

10:45 AM - 11:00 AM

[14a-315-5] Characterization of inductively coupled plasma reactive ion etching damage for n-type GaN

〇Shinji Yamada^1,2, Hideki Sakurai^1,2, Masato Omori¹, Yamato Osada², Ryuichiro Kamimura², Masahiro Horita³, Jun Suda^1,3, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.ULVAC ISET, 3.Kyoto Univ.)

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