Yutaka Ohno

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 1:15 PM - 5:15 PM B6 (B6)

Oral presentation
| 13 Semiconductors
| 13.10 Compound solar cells

[14p-B6-1~15] 13.10 Compound solar cells

4:15 PM - 4:30 PM

[14p-B6-12] Atomistic structure of Si/GaAs interfaces fabricated by surface-activated bonding at RT

〇Yutaka Ohno¹, Hideto Yoshida², Seiji Takeda², Liang Jianbo³, Naoteru Shigekawa³ (1.IMR, Tohoku Univ., 2.ISIR, Osaka Univ., 3.Osaka-City Univ.)

Tue. Mar 14, 2017 9:15 AM - 12:15 PM F201 (F201)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal evaluation, impurities and crystal defects

[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

9:30 AM - 9:45 AM

[14a-F201-2] Segregation mechanism of oxygen atoms at tilt boundaries in silicon

〇Yutaka Ohno¹, Kaihei Inoue¹, Kozo Fujiwara¹, Kentaro Kutsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Naoki Ebisawa², Yasuo Shimizu², Koji Inoue², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³, Shingo Tanaka⁴, Masanori Kohyama⁴ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ., 4.AIST)

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